Yethula izinhlobo ezahlukene zamaseli

1. ^{Isingeniso Kumaseli}

(1) Uhlolojikelele:Amaseli ayizici eziyinhlokoi-photovoltaic power generation, kanye nomzila wabo wezobuchwepheshe kanye nezinga lenqubo lithinta ngokuqondile ukusebenza kahle kokukhiqizwa kwamandla kanye nempilo yesevisi yamamojula we-photovoltaic.Amaseli e-Photovoltaic atholakala phakathi nendawo yochungechunge lwemboni ye-photovoltaic.Amashidi amancane e-semiconductor angaguqula amandla okukhanya kwelanga abe amandla kagesi atholwe ngokucubungula amawafa e-silicon e-single/poly crystalline.

Umgomo wei-photovoltaic power generationivela kumphumela we-photoelectric wama-semiconductors.Ngokukhanyisa, umehluko ongaba khona ukhiqizwa phakathi kwezingxenye ezihlukene zama-semiconductors noma ama-semiconductors ahlanganiswe nezinsimbi.Iguqulwa isuka kuma-photon (amaza okukhanya) ibe ama-electron kanye namandla okukhanya ibe amandla kagesi ukuze yakhe i-voltage.kanye nenqubo yamanje.Ama-wafers e-silicon akhiqizwa kusixhumanisi esikhuphukayo awakwazi ukuqhuba ugesi, futhi amaseli elanga asetshenziwe anquma amandla okukhiqiza amandla amamojula we-photovoltaic.

(2) Ukuhlelwa:Ngokombono wohlobo lwe-substrate, amaseli angahlukaniswa abe izinhlobo ezimbili:Amaseli ohlobo lwe-P namaseli ohlobo lwe-N.I-Doping boron kumakristalu e-silicon ingenza ama-semiconductors ohlobo lwe-P;i-doping phosphorus ingenza ama-semiconductors ohlobo lwe-N.Impahla yokusetshenziswa yebhethri yohlobo lwe-P iwuhlobo lwe-silicon wafer (ehlanganiswe ne-boron), futhi impahla eluhlaza yebhethri yohlobo lwe-N i-N-type silicon wafer (ehlanganiswe ne-phosphorus).Amaseli ohlobo lwe-P ikakhulukazi ahlanganisa i-BSF (iseli le-aluminium back field cell) kanye ne-PERC (i-emitter edluliswayo neseli elingemuva);Amaseli ohlobo lwe-N okwamanje angawamanje ubuchwepheshe obujwayelekileI-TOPCon(i-tunneling oxide layer passivation contact) kanye ne-HJT (ifilimu elincanyana elingaphakathi le-Hetero junction).Ibhethri yohlobo lwe-N iqhuba ugesi ngama-electron, futhi ukuncishiswa okubangelwa ukukhanya okubangelwa ukubhanqwa kwe-athomu ye-boron-oxygen kuncane, ngakho ukusebenza kahle kokuguqulwa kwesithombe sikagesi kuphezulu.

3. Ukwethulwa kwebhethri le-PERC

(1) Uhlolojikelele: Igama eligcwele lebhethri le-PERC “liyibhethri le-emitter ne-back passivation”, elisuselwa ngokwemvelo esakhiweni se-AL-BSF sebhethri elivamile le-aluminium yasemuva.Ngokombono wesakhiwo, lezi ezimbili ziyefana, futhi ibhethri ye-PERC inongqimba olulodwa kuphela lokudlula emuva kunebhethri ye-BSF (ubuchwepheshe bebhethri besizukulwane sangaphambilini).Ukwakheka kwesitaki sokudlula esingemuva kuvumela iseli le-PERC ukuthi linciphise isivinini sokuhlanganisa kabusha kwendawo engemuva ngenkathi kuthuthukiswa ukubonakaliswa kokukhanya kwendawo engemuva futhi ithuthukisa ukusebenza kahle kokuguqulwa kweseli.

(2) Umlando wokuthuthukiswa: Kusukela ngo-2015, amabhethri e-PERC asekhaya angena esigabeni sokukhula ngokushesha.Ngo-2015, amandla okukhiqiza amabhethri e-PERC asekhaya afinyelela endaweni yokuqala emhlabeni, afinyelela ku-35% womthamo wokukhiqiza webhethri we-PERC womhlaba wonke.Ngo-2016, i-"Photovoltaic Top Runner Program" esetshenziswe yi-National Energy Administration yaholela ekuqalweni okusemthethweni kokukhiqizwa kwenqwaba yamaseli e-PERC e-China, ngesilinganiso sokusebenza kahle esingu-20.5%.U-2017 uyinkathi yoshintsho lwesabelo semakethe yeamaseli we-photovoltaic.Isabelo semakethe samaseli avamile saqala ukwehla.Isabelo semakethe yamaseli e-PERC yasekhaya senyuke safinyelela ku-15%, futhi amandla ayo okukhiqiza anyukele ku-28.9GW;

Kusukela ngo-2018, amabhethri e-PERC abe yiwona ahamba phambili emakethe.Ngo-2019, ukukhiqizwa kwenqwaba yamaseli e-PERC kuzoshesha, ngokusebenza kahle kokukhiqiza ngobuningi okungama-22.3%, okubalwe ngaphezu kwama-50% wamandla okukhiqiza, okudlula ngokusemthethweni amaseli e-BSF ukuze abe ubuchwepheshe beselula obujwayelekile kakhulu be-photovoltaic.Ngokwezilinganiso ze-CPIA, ngo-2022, ukusebenza kahle kokukhiqizwa okukhulu kwamaseli e-PERC kuzofinyelela ku-23.3%, futhi umthamo wokukhiqiza uzoba ngaphezu kuka-80%, futhi isabelo semakethe sisazobekwa kuqala.

4. I-TOPcon ibhethri

(1) Incazelo:Ibhethri ye-TOPcon, okungukuthi, iseli yokuxhumana ye-tunneling oxide passivation, ilungiswa ngemuva kwebhethri ngongqimba lwe-oxide oluyi-ultra-thin oxide kanye nongqimba oluncane lwe-polysilicon olunezingqimba, oluhlangene lwakha ukwakheka kokuthintana kwe-passivation.Ngo-2013, yahlongozwa yiFraunhofer Institute eJalimane.Uma kuqhathaniswa namaseli e-PERC, eyodwa iwukusebenzisa i-silicon yohlobo lwe-n njenge-substrate.Uma kuqhathaniswa namaseli e-silicon ohlobo lwe-p, i-silicon yohlobo lwe-n inempilo ende yenkampani yenethiwekhi, ukuguqulwa okuphezulu, kanye nokukhanya okubuthakathaka.Okwesibili ukulungisa ungqimba lwe-passivation (i-ultra-thin silicon oxide SiO2 kanye ne-doped poly silicon ungqimba oluncane lwe-Poly-Si) ngemuva ukuze kwakhiwe isakhiwo sokuxhumana esihlukanisa ngokuphelele isifunda esinezinsimbi, esinganciphisa nakakhulu ingemuva. phezulu.Amathuba okuhlanganisa futhi inkampani yenethiwekhi encane phakathi kobuso nensimbi athuthukisa ukusebenza kahle kokuguqulwa kwebhethri.